Semiconductor heterostructures for lasers and microwave FETs

Results of developing the design and manufacturing technologies of epitaxial heterostructures for microwave FETs and various semiconductor lasers are presented. A technology of producing heterostructures in AlGaAs/InGaAs/GaAs, InAlAs/InGaAs/InP and AlGaN/GaN systems of materials for microwave FETs has been developed. On the basis of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures microwave FETs have been manufactured providing a 0.6-0.8 dB noise factor with a gain above 11 dB at 12 GHz. On GaAs substrates by means of a molecular-beam epitaxy heterostructures have been obtained with InAs/lnGaAs quantum dots, on the basis of which single-mode laser diodes and vertical-cavity surface-emitting lasers (VCSELs) in the 1300 nm range have been created. A manufacturing technique has been developed for 960-980 nm VCSELs with threshold currents below 1 mA and maximum output power of 3 mW in continuous operating mode at room temperature. These VCSELs are suitable for applications in monolithic matrix emitters.