The MTO thyristor-a new high power bipolar MOS thyristor

Author

Piccone, D.E. ; De Doncker, R.W. ; Barrow, J.A. ; Tobin, W.H.

Author_Institution

Silicon Power Corp., Malvern, PA, USA

Volume

3

fYear

1996

fDate

6-10 Oct 1996

Firstpage

1472

Abstract

A new high power bipolar MOS thyristor, the MTO^TM thyristor, is a latching device which extends the limited capabilities of the MCT and IGBT to higher power and blocking voltage. The MTO thyristor plan fits well, beginning at a blocking voltage level where the other bipolar MOS devices are believed to have a ceiling of diminishing returns, that is above 3000 V. The MTO thyristor is easily accommodated to the conventional disk-type package for double sided cooling and permits design voltage opportunity to that achieved for thyristors, e.g., 9000 V. Feasibility of concept has been established and development for specific designs is well underway

Keywords

MIS devices; MOS-controlled thyristors; cooling; heat sinks; power bipolar transistors; power field effect transistors; 9 kV; MTO thyristor; blocking voltage level; concept feasibility; design voltage; designs; development; disk-type package; double sided cooling; high power bipolar MOS thyristor; latching device; Anodes; Cooling; FETs; Insulated gate bipolar transistors; MOS devices; MOSFETs; Packaging; Silicon; Thyristors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE

Conference_Location

San Diego, CA

ISSN

0197-2618

Print_ISBN

0-7803-3544-9

Type

conf

DOI

10.1109/IAS.1996.559262

Filename

559262