Title :
Computer simulation for ion sources optimization
Author :
Litovko, Irina V. ; Gushenets, Vasilij I. ; Oks, Efim M.
Author_Institution :
Inst. of Nucl. Res., NASU, Kiev
Abstract :
Computer simulation for ion sources optimization used for ion implantations is reported. Highly stripped ion source is designed to provide high current beams of multiply charged phosphorous and boron ions for high energy ion implantation. Maximum current transport for boron ions is obtained with the optimisation of geometries of the ion-optical system and experimental setup. The maximum attainable percentage of singly charged B ions was 65% and the total current transport was about 60%.
Keywords :
boron; ion implantation; ion sources; optimisation; phosphorus; B; P; charged boron ion; charged phosphorous ion; current beams; ion implantations; ion sources optimization; ion-optical system; Boron; Computational geometry; Computational modeling; Computer simulation; Ion beams; Ion implantation; Ion sources; Nuclear electronics; Radio access networks; Solid modeling;
Conference_Titel :
Plasma Science, 2008. ICOPS 2008. IEEE 35th International Conference on
Conference_Location :
Karlsruhe
Print_ISBN :
978-1-4244-1929-6
Electronic_ISBN :
0730-9244
DOI :
10.1109/PLASMA.2008.4590683
