DocumentCode
2435652
Title
Computer simulation for ion sources optimization
Author
Litovko, Irina V. ; Gushenets, Vasilij I. ; Oks, Efim M.
Author_Institution
Inst. of Nucl. Res., NASU, Kiev
fYear
2008
fDate
15-19 June 2008
Firstpage
1
Lastpage
1
Abstract
Computer simulation for ion sources optimization used for ion implantations is reported. Highly stripped ion source is designed to provide high current beams of multiply charged phosphorous and boron ions for high energy ion implantation. Maximum current transport for boron ions is obtained with the optimisation of geometries of the ion-optical system and experimental setup. The maximum attainable percentage of singly charged B ions was 65% and the total current transport was about 60%.
Keywords
boron; ion implantation; ion sources; optimisation; phosphorus; B; P; charged boron ion; charged phosphorous ion; current beams; ion implantations; ion sources optimization; ion-optical system; Boron; Computational geometry; Computational modeling; Computer simulation; Ion beams; Ion implantation; Ion sources; Nuclear electronics; Radio access networks; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2008. ICOPS 2008. IEEE 35th International Conference on
Conference_Location
Karlsruhe
ISSN
0730-9244
Print_ISBN
978-1-4244-1929-6
Electronic_ISBN
0730-9244
Type
conf
DOI
10.1109/PLASMA.2008.4590683
Filename
4590683
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