DocumentCode :
2435875
Title :
Thyristor(diode) on-state voltage, the ABCD modeling parameters revisited including isothermal overload and surge current modeling
Author :
Motto, John W., Jr. ; Karstaedt, William H. ; Sherbondy, Jerry M., Sr. ; Leslie, Scott G.
Author_Institution :
Powerex Inc., Youngwood, PA, USA
Volume :
3
fYear :
1996
fDate :
6-10 Oct 1996
Firstpage :
1481
Abstract :
Circuit modeling is an essential tool in the design of power electronic applications. The widespread use of these models, however, depends upon the availability of parametric data for devices and the proper trade-off of the accuracy and simplicity of the model. This paper addresses these two areas with regard to the forward on-state voltage of thyristors and diodes. As has been described in previous papers, forward on-state forward voltage drop can be modeled by the now classical ABCD parameters. This paper discusses the problems and strengths of the ABCD model and describes how the ABCD parameters can be quickly and efficiently calculated by a 3rd order, multiple, nonlinear regression in a new STARS Visual module. This paper proposes an alternate mathematical model to the ABCD model, labeled the MNOP model, and describes the advantages of this model. This paper also describes one of the main limitations of the ABCD model, which is the fact that it is typically used to describe the maximum forward voltage drop on the data sheet, which is NOT an isothermal curve. This, in turn, does not permit the change in the on-state forward voltage drop as a function of junction temperature to be modeled. Isothermal models of diodes and thyristors will be discussed and a new simplified model proposed for surge and overload conditions
Keywords :
circuit analysis computing; power semiconductor diodes; power semiconductor switches; semiconductor device models; software packages; surges; thermal analysis; thyristors; ABCD modeling parameters; MNOP model; STARS Visual module; circuit modeling; computer simulation; diode on-state voltage; forward on-state voltage; isothermal overload modeling; junction temperature; mathematical model; parametric data; power electronic applications; surge current modeling; third order multiple nonlinear regression; thyristor on-state voltage; Circuits; Isothermal processes; Mathematical model; Power electronics; Power system modeling; Semiconductor diodes; Surges; Temperature; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE
Conference_Location :
San Diego, CA
ISSN :
0197-2618
Print_ISBN :
0-7803-3544-9
Type :
conf
DOI :
10.1109/IAS.1996.559264
Filename :
559264
Link To Document :
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