Multilayer MMIC using a 3 mu m*3-layer dielectric film structure

Author

Tokumitsu, T. ; Hiraoka, T. ; Nakamoto, H. ; Takenaka, T.

Author_Institution

ATR Opt. & Radio Commun. Res. Lab., Kyoto, Japan

fYear

1990

fDate

8-10 May 1990

Firstpage

831

Abstract

Very small multilayer MMICs (monolithic microwave integrated circuits) using miniature microstrip lines on a thin dielectric film are described. Their configuration, loss characteristic, and dielectric materials (silicon oxynitride and polyinide) are discussed. Other effective thin-film transmission lines, line crossovers, and vertical connections are also discussed. Multiport Wilkinson dividers, 90 degrees and 180 degrees hybrids, and distributed amplifiers are implemented in an area of less than 1 mm/sup 2/.<>

Keywords

MMIC; losses; microwave amplifiers; strip line components; 180 degrees hybrids; 3 micron; 90 degree hybrid; SiON; distributed amplifiers; line crossovers; loss characteristic; miniature microstrip lines; monolithic microwave integrated circuits; multilayer MMICs; multiport Wilkinson dividers; polyinide; thin dielectric film; thin-film transmission lines; three layer dielectric film structure; vertical connections; Dielectric films; Dielectric losses; Dielectric materials; Dielectric thin films; MMICs; Microstrip; Microwave integrated circuits; Monolithic integrated circuits; Nonhomogeneous media; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99708

Filename

99708