Title :
Millimeter-wave coolable LNAs
Author :
Minnebaev, V.M. ; Krasnov, V.V.
Author_Institution :
SRI "Pulsar", Moscow, Russia
Abstract :
Presented here are the results of design and production of cooled low-noise amplifiers for 13 mm and 8 mm bands on the basis of discrete FETs and monolithic ICs. LNAs fabricated for RT-22 FIAN receivers have the following parameters: 1) /spl Delta/F=33-38 GHz, T/sub N/<80 K, Gain=36 dB; 2) /spl Delta/F=21-25 GHz, T/sub N/<30 K, Gain=27 dB.
Keywords :
MIMIC; millimetre wave amplifiers; millimetre wave field effect transistors; millimetre wave receivers; radio receivers; 21 to 25 GHz; 27 dB; 33 to 38 GHz; 36 dB; RT-22 FIAN receiver; discrete FET; field effect transistors; integrated circuits; millimeter wave cooled low-noise amplifiers; monolithic IC; FETs; HEMTs; Helium; IEEE catalog; Low-noise amplifiers; Millimeter wave communication; Millimeter wave measurements; Millimeter wave technology; Organizing; Radiofrequency amplifiers;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158775
