DocumentCode
2436076
Title
Ultra wide-band transistor amplifier with special shape of amplitude-frequency characteristic designed for application as a component of power vacuum solid-state module
Author
Tyazhlov, V.S. ; Beginin, D.V. ; Buterin, A.V.
Author_Institution
Sci. & Production Center, ALMAZ-PHAZOTRAN, Russia
fYear
2003
fDate
8-12 Sept. 2003
Firstpage
153
Lastpage
155
Abstract
In the present article one can find the results of creation of solid-state amplifier designated for shaping of amplitude-frequency characteristic of power vacuum solid-state module. Creation scheme, main rated and experimental characteristics are presented.
Keywords
MESFET circuits; microwave power amplifiers; wideband amplifiers; 4 to 12 GHz; amplitude-frequency characteristic; microwave power module; power vacuum solid-state amplifier; radio-electronic apparatus; ultra wide-band transistor amplifier; Broadband amplifiers; Electronic warfare; IEEE catalog; Multichip modules; Organizing; Power amplifiers; Seminars; Shape; Solid state circuits; Ultra wideband technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-26-X
Type
conf
DOI
10.1109/CRMICO.2003.158777
Filename
1256462
Link To Document