• DocumentCode
    2436092
  • Title

    Ultra-low-noise amplifier for the ranges 0.5-1, 1-2, 2-4 GHz: design peculiarities

  • Author

    Korolev, A.M. ; Shulga, V.M.

  • Author_Institution
    Radioastron. Inst., Nat. Acad. of Sci., Ukraine
  • fYear
    2003
  • fDate
    8-12 Sept. 2003
  • Firstpage
    156
  • Lastpage
    158
  • Abstract
    Ultra-low-noise amplifiers, having noise temperature 10-20 K under moderate (uncryogenic) cooling, for the ranges 0.5-1, 1-2, 2-4 GHz are presented. The design peculiarities aimed to the most effective realization of modern PHEMTs potential are described. Relying on obtained experimental data prediction, it is drown that noise temperature of uncooled broadband amplifiers may be reduced down to 10 K over 0.3 to 3 GHz band.
  • Keywords
    HEMT circuits; UHF amplifiers; circuit noise; cryogenic electronics; wideband amplifiers; 0.5 GHz to 1 GHz; 1 GHz to 2 GHz; 10 to 20 K; 2 to 4 GHz; VSWR; broadband amplifier; modern PHEMT potential; noise temperature; pseudomorphic high electron mobility transistor; ultra-low-noise amplifier; voltage standing wave ratio; HEMTs; Helium; IEEE catalog; Low-noise amplifiers; Microwave theory and techniques; Organizing; PHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea, Ukraine
  • Print_ISBN
    966-7968-26-X
  • Type

    conf

  • DOI
    10.1109/CRMICO.2003.158778
  • Filename
    1256463