• DocumentCode
    2436150
  • Title

    The initiation mechanism of N-type negative differential resistance areas on the IV-curves of IMPATT-diode in strong microwave field

  • Author

    Usanov, D.A. ; Skripal, A.V. ; Abramov, A.V. ; Kletsov, A.A.

  • Author_Institution
    N.G. Chemyshevsky Saratov State Univ., Russia
  • fYear
    2003
  • fDate
    8-12 Sept. 2003
  • Firstpage
    167
  • Lastpage
    169
  • Abstract
    The initiation mechanism of N-type negative differential resistance areas on the IV-curves of IMPATT-diode in strong microwave field had been described.
  • Keywords
    IMPATT diodes; negative resistance devices; IMPATT-diode; N-type negative differential resistance; current-voltage characteristic; electrodynamic system; initiation mechanism; strong microwave field; Diodes; IEEE catalog; Organizing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea, Ukraine
  • Print_ISBN
    966-7968-26-X
  • Type

    conf

  • DOI
    10.1109/CRMICO.2003.158782
  • Filename
    1256467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2436150