Title :
The initiation mechanism of N-type negative differential resistance areas on the IV-curves of IMPATT-diode in strong microwave field
Author :
Usanov, D.A. ; Skripal, A.V. ; Abramov, A.V. ; Kletsov, A.A.
Author_Institution :
N.G. Chemyshevsky Saratov State Univ., Russia
Abstract :
The initiation mechanism of N-type negative differential resistance areas on the IV-curves of IMPATT-diode in strong microwave field had been described.
Keywords :
IMPATT diodes; negative resistance devices; IMPATT-diode; N-type negative differential resistance; current-voltage characteristic; electrodynamic system; initiation mechanism; strong microwave field; Diodes; IEEE catalog; Organizing;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158782
