Gate oxide reliability: the use of simulation to quantify important aspects of lifetime projection from TDDB data

Author

Hunter, William R.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1994

fDate

16-19 Oct 1994

Firstpage

95

Lastpage

103

Abstract

We use simulations to study the consequences of applying the effective thickness theory of oxide reliability to both the Berman and Chen oxide electric field models for the time-to-failure of Time Dependent Dielectric Breakdown (TDDB) data. The focus is on understanding the effects of errors in the analysis of TDDB data on the accuracy of lifetime prediction. There are three aspects which are studied for their effects on the accuracy of lifetime prediction (which are in addition to the frequently discussed field model sensitivity): extrapolation of the cumulative distribution function (CDF) F to small values of F (as required by specific reliability criteria); conversion from measured gate voltage V_g to internal oxide voltage V_ox; polarity dependence

Keywords

MIS structures; MOSFET; dielectric thin films; electric breakdown; errors; failure analysis; semiconductor device models; semiconductor device reliability; MOS gate dielectrics; TDDB data; cumulative distribution function extrapolation; effective thickness theory; electric field models; errors; field model sensitivity; gate oxide reliability; internal oxide voltage; lifetime prediction accuracy; lifetime projection; polarity dependence; simulation; time dependent dielectric breakdown; time-to-failure; Accuracy; Data analysis; Dielectric breakdown; Distribution functions; Error analysis; Instruments; Predictive models; Reliability engineering; Reliability theory; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop, 1994. Final Report., 1994 International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-1908-7

Type

conf

DOI

10.1109/IRWS.1994.515834

Filename

515834