Title :
Gate oxide reliability: the use of simulation to quantify important aspects of lifetime projection from TDDB data
Author :
Hunter, William R.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We use simulations to study the consequences of applying the effective thickness theory of oxide reliability to both the Berman and Chen oxide electric field models for the time-to-failure of Time Dependent Dielectric Breakdown (TDDB) data. The focus is on understanding the effects of errors in the analysis of TDDB data on the accuracy of lifetime prediction. There are three aspects which are studied for their effects on the accuracy of lifetime prediction (which are in addition to the frequently discussed field model sensitivity): extrapolation of the cumulative distribution function (CDF) F to small values of F (as required by specific reliability criteria); conversion from measured gate voltage Vg to internal oxide voltage Vox; polarity dependence
Keywords :
MIS structures; MOSFET; dielectric thin films; electric breakdown; errors; failure analysis; semiconductor device models; semiconductor device reliability; MOS gate dielectrics; TDDB data; cumulative distribution function extrapolation; effective thickness theory; electric field models; errors; field model sensitivity; gate oxide reliability; internal oxide voltage; lifetime prediction accuracy; lifetime projection; polarity dependence; simulation; time dependent dielectric breakdown; time-to-failure; Accuracy; Data analysis; Dielectric breakdown; Distribution functions; Error analysis; Instruments; Predictive models; Reliability engineering; Reliability theory; Voltage measurement;
Conference_Titel :
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-1908-7
DOI :
10.1109/IRWS.1994.515834
