DocumentCode
2436251
Title
X-band monolithic GaAs PIN diode variable attenuation limiter
Author
Seymour, D.J. ; Heston, D.D. ; Lehmann, R.E. ; Zych, D.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1990
fDate
8-10 May 1990
Firstpage
841
Abstract
Monolithic GaAs PIN diode attenuator/limiter circuits have demonstrated 26 dB of variable attenuation at X-band, while maintaining under 1.5 to 1 input and output voltage standing wave ratios (VSWRs). Insertion loss is 0.8 dB at 10 GHz in the zero bias condition. Passive limiting provides 15 dB of isolation at RF input power of 2.0 W CW (continuous wave). These results are obtained using a vertical pin diode process on metallorganic chemical vapor deposition (MOCVD) material.<>
Keywords
III-V semiconductors; MMIC; attenuators; gallium arsenide; microwave limiters; p-i-n diodes; vapour phase epitaxial growth; 0.8 dB; 10 GHz; 2 W; GaAs; MMIC; MOCVD; PIN diode; SHF; X-band; metallorganic chemical vapor deposition; monolithic type; variable attenuation limiter; vertical p-i-n diode process; Attenuation; Attenuators; Chemical vapor deposition; Circuits; Gallium arsenide; Inorganic materials; Insertion loss; MOCVD; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location
Dallas, TX
Type
conf
DOI
10.1109/MWSYM.1990.99710
Filename
99710
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