Title :
X-band monolithic GaAs PIN diode variable attenuation limiter
Author :
Seymour, D.J. ; Heston, D.D. ; Lehmann, R.E. ; Zych, D.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Monolithic GaAs PIN diode attenuator/limiter circuits have demonstrated 26 dB of variable attenuation at X-band, while maintaining under 1.5 to 1 input and output voltage standing wave ratios (VSWRs). Insertion loss is 0.8 dB at 10 GHz in the zero bias condition. Passive limiting provides 15 dB of isolation at RF input power of 2.0 W CW (continuous wave). These results are obtained using a vertical pin diode process on metallorganic chemical vapor deposition (MOCVD) material.<>
Keywords :
III-V semiconductors; MMIC; attenuators; gallium arsenide; microwave limiters; p-i-n diodes; vapour phase epitaxial growth; 0.8 dB; 10 GHz; 2 W; GaAs; MMIC; MOCVD; PIN diode; SHF; X-band; metallorganic chemical vapor deposition; monolithic type; variable attenuation limiter; vertical p-i-n diode process; Attenuation; Attenuators; Chemical vapor deposition; Circuits; Gallium arsenide; Inorganic materials; Insertion loss; MOCVD; Radio frequency; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99710
