The influence of the base resistance modulation on switching losses in IGBTS

Author

Reddig, M. ; Kraus, R.

Author_Institution

Federal Armed forces Univ., Munich, Germany

Volume

3

fYear

1996

fDate

6-10 Oct 1996

Firstpage

1500

Abstract

This paper describes how the switching losses of IGBTs are influenced by the base resistance and its modulation due to the injected base charge. The calculation of the base resistance has been included in the IGBT model. It considers the shape of the charge carrier distribution in the dynamic case. With it, accurate results of the simulation are obtainable. This effect has been analyzed by measurements and simulations of two different IGBT-types. The influence of resistive and inductive load was also investigated. Parasitic elements in the commutation loop were taken into consideration

Keywords

bipolar transistor switches; insulated gate bipolar transistors; losses; power bipolar transistors; power semiconductor switches; semiconductor device models; semiconductor device testing; switching circuits; IGBT; base resistance modulation; charge carrier distribution; commutation loop; inductive load; injected base charge; measurements; parasitic elements; resistive load; simulation; switching losses; transistor model; Charge carriers; Circuit simulation; Conductivity; Current measurement; Electrical resistance measurement; Insulated gate bipolar transistors; Switching circuits; Switching loss; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE

Conference_Location

San Diego, CA

ISSN

0197-2618

Print_ISBN

0-7803-3544-9

Type

conf

DOI

10.1109/IAS.1996.559266

Filename

559266