Title :
New generation of drift step recovery diodes for picosecond switching and high repetition rate operation
Author :
Kozlov, V.A. ; Smirnova, I.A. ; Moryakova, S.A. ; Kardo-Sysoyev, A.F.
Author_Institution :
loffe Physicotech. Inst., RAS, St.Petersburg, Russia
Abstract :
A new generation of drift step recovery diodes (DSRD) has been developed and demonstrated. Switching time of the DSRDs was reduced down to the 100 ps level, while average pulse repetition rate increased up to 10 MHz with time stability of switching as low as 10 ps. Fast, stable and high-frequency operation of silicon DSRDs makes them suitable for time-domain radio telecommunications, UWB radars, and other uses.
Keywords :
charge storage diodes; radiocommunication; silicon; time-domain analysis; UWB radars; average pulse repetition rate; drift step recovery diodes; high-frequency operation; silicon DSRD; switching time; time-domain radio telecommunications; ultra-wideband; IEEE catalog; Microwave technology; Organizing; Pulse generation; Pulse modulation; Semiconductor diodes; Stability; Telecommunication switching; Ultra wideband radar; Ultra wideband technology;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158788
