GaInP/GaAs cascade solar cells grown by molecular beam epitaxy

Author

Lammasniemi, J. ; Kazantsev, A.B. ; Jaakkola, R. ; Toivonen, M. ; Jalonen, M. ; Aho, R. ; Pessa, M.

Author_Institution

Dept. of Phys., Tampere Univ. of Technol., Finland

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

823

Lastpage

826

Abstract

First results for molecular beam epitaxy (MBE) grown Ga_0.51In_0.49P/GaAs cascade solar cells are presented. The structures were prepared by both solid-source (SS) MBE and gas-source (GS) MBE. The tunnel diodes between the subcells were grown by using the standard MBE dopants (silicon and beryllium) but dopant diffusion related degradation of the cell characteristics was not observed. For the best SSMBE structure, a conversion efficiency of 21.1% was measured at AM0 for a 1×1 cm² cell. For the GSMBE structures, the best AM0 conversion efficiency was 20.8% for a 2×2 cm² device. In addition, the first MBE results for advanced Al_0.51In_0.49P/Ga_0.51In_0.49P-based tunnel diodes are presented

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; solar cells; tunnel diodes; 1 cm; 2 cm; 20.8 percent; 21.1 percent; AM0 efficiency; Al_0.51In_0.49P/Ga_0.51In_0.49P-based tunnel diodes; Al_0.5In_0.49P-Ga_0.51In_0.49P; Ga_0.51In_0.49P-GaAs; Ga_0.51In_0.49P/GaAs cascade solar cells; GaInP/GaAs cascade solar cells; MBE dopants; beryllium dopant; conversion efficiency; dopant diffusion related degradation; gas-source MBE; molecular beam epitaxy; silicon dopant; solid-source MBE; tunnel diodes; Diodes; Epitaxial growth; Gallium arsenide; Inductors; MOCVD; Molecular beam epitaxial growth; Photovoltaic cells; Physics; Production; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654214

Filename

654214