Title :
10 Watt two-channel switch for 8 mm band
Author :
Abolduyev, I.M. ; Vald-Perlov, V.M. ; Veitz, V.V. ; Zubkov, A.M. ; Minnebaev, V.M.
Author_Institution :
SRI "Pulsar", Russia
Abstract :
Presented in this paper are the results of design and production of 10 W microwave power switch on the basis of GaAs p-i-n diodes. The switch operates within 33.5-34.5 GHz frequency band.
Keywords :
III-V semiconductors; gallium arsenide; microwave switches; millimetre wave devices; power semiconductor switches; 10 W; 33.5 to 34.5 GHz; 8 mm; GaAs; GaAs p-i-n diode; microwave power switch design; two-channel switch; Electrodes; IEEE catalog; Organizing; P-i-n diodes; PIN photodiodes; Switches;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158789
