Title :
High-speed MSM-photodetectors
Author :
Averin, S.V. ; Sachot, R.
Author_Institution :
Inst. of Radioelectron., Russian Acad. of Sci., Moscow, Russia
Abstract :
In this paper, we analyze the limitations imposed by reduced dimensions of planar photodiode structures. We show that a modified detector with heterobarrier and a diode structure with recessed contacts lead to reduced carrier sweep-out and better conversion efficiency.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; optical communication equipment; photodetectors; photodiodes; InP-GaAs; carrier sweep-out; heterobarrier structure; high-speed MSM-photodetector; metal-semiconductor-metal; modified detector; optical communication system; planar photodiode structure; Detectors; IEEE catalog; Indium phosphide; Optical fiber communication; Organizing; Photodetectors; Photodiodes; Photonics; Physics; Semiconductor diodes;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158790
