Title :
A range of phase-stable low-noise amplifiers
Author :
Khitko, V.I. ; Kovalenko, A.F. ; Pavlyuchik, A.A. ; Ignatenko, A.S.
Author_Institution :
Minsk Res. Inst. of Radio Mater., Belarus
Abstract :
The paper presents the results of developing and researching a range of 1-2, 2-4, 4-8, 8-12 GHz phase-stable low-noise GaAs MESFET amplifiers. The calculated and experimental performance of the amplifiers is shown.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; amplifiers; gallium arsenide; 1 to 2 GHz; 2 to 4 GHz; 4 to 8 GHz; 8 to 12 GHz; GaAs; GaAs MESFET amplifier; metal-semiconductor field effect transistor; phase-stable low-noise amplifier; Hidden Markov models; IEEE catalog; Low-noise amplifiers; Noise measurement; Organizing;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158796
