A novel trench gate LDMOS for RF applications

Author

Wilson, P.H.

Author_Institution

Fairchild Semicond. Discrete Power Technol. Group, San Jose, CA, USA

fYear

2003

fDate

8-12 Sept. 2003

Firstpage

214

Lastpage

215

Abstract

In this paper a novel trench gate lateral double diffused MOSFET (TG-LDMOS) device will be discussed and compared to the conventional LDMOS structure. Currently, the LDMOS devices are the preferred technology for base station amplifiers and in Power MOSFET switching applications[Baliga, B.Jayant (1988), Bose, Bimal. K (1992)]. The synopsys TCAD simulation results will shows an improvement in the breakdown capability, capacitance and gate charge reduction, and improved transfer curve characteristics as compared with a conventional LDMOS structure.

Keywords

isolation technology; power MOSFET; radiofrequency amplifiers; technology CAD (electronics); LDMOS; RF base station amplifiers; gate charge reduction; power MOSFET switching applications; synopsys TCAD simulation; transfer curve characteristics; trench gate lateral double diffused MOSFET; Capacitance; Equations; IEEE Press; Integrated circuit technology; MOSFETs; Microwave technology; Radio frequency; Radiofrequency amplifiers; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference

Conference_Location

Sevastopol, Crimea, Ukraine

Print_ISBN

966-7968-26-X

Type

conf

DOI

10.1109/CRMICO.2003.158799

Filename

1256484