DocumentCode
2436448
Title
Nonlinear model of high electron mobility transistor
Author
Yemtsev, P.A. ; Sunduchkov, I.K. ; Shelkovnikov, B.N. ; Sunduchkov, K.S.
Author_Institution
Inst. of Telecommun., Nat. Tech. Univ. of Ukraine, Kyiv, Ukraine
fYear
2003
fDate
8-12 Sept. 2003
Firstpage
216
Lastpage
217
Abstract
A new nonlinear HEMT model is presented. The model is based on a well-known small-signal model and includes a nonlinear description of some typically nonlinear components. A parameter extraction algorithm based on processing S-parameter and noise figure data measurements has been developed.
Keywords
S-parameters; high electron mobility transistors; semiconductor device models; semiconductor device noise; HEMT; S-parameter; high electron mobility transistor; microwave applications; noise figure data measurement; parameter extraction algorithm; small-signal model; Circuit noise; HEMTs; Hidden Markov models; IEEE catalog; MODFETs; Noise figure; Noise measurement; Organizing; Parameter extraction; Working environment noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-26-X
Type
conf
DOI
10.1109/CRMICO.2003.158800
Filename
1256485
Link To Document