Title :
Full monolithic sampling head IC
Author :
Miura, A. ; Kobayashi, S. ; Yakihara, T. ; Uchida, S. ; Kamada, H. ; Oka, S.
Author_Institution :
Yokogawa Electr. Corp., Tokyo, Japan
Abstract :
A full monolithic sampling head IC with a bandwidth of up to 26 GHz, is described. It consists of resonant tunneling diodes (RTDs) for a sampling pulse generator and Schottky barrier diodes for a sampling bridge. The RTD is made using an InGaAs-AlAs pseudomorphic superlattice system. For this type of RTD, a peak to valley ratio of 9 at 202 degrees C with switching voltages of up to 1.5 V/sub p-p/ was obtained. The Schottky barrier diode is made from an (InGaAs)/sub 0.5/(InAlAs)/sub 0.5/ mixing crystal. The RTD and Schottky barrier diodes are monolithically constructed on a Fe-doped InP substrate.<>
Keywords :
MMIC; Schottky-barrier diodes; bridge circuits; microwave measurement; resonant tunnelling devices; test equipment; (InGaAs)/sub 0.5/(InAlAs)/sub 0.5/ mixing crystal; 1.5 V; 26 GHz; InGaAs-AlAs; InP:Fe; InP:Fe substrate; RTD; Schottky barrier diodes; microwave IC; monolithic sampling head IC; pseudomorphic superlattice system; resonant tunneling diodes; sampling bridge; sampling pulse generator; switching voltages; Bandwidth; Bridge circuits; Monolithic integrated circuits; Pulse generation; Resonant tunneling devices; Sampling methods; Schottky barriers; Schottky diodes; Superlattices; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99711
