Title :
Experimental determination parameter of adaptive model of the field transistor with barrier Schottky
Author_Institution :
"Mitec" Com Ltd, Moscow, Russia
Abstract :
Considered in this paper are the peculiarities of experimental parameters definition for adaptive model of Schottky FET. This model is applied in MIC optimizer CAD and provides register of calculated and experimental volt-amps and volt-farad diagrams of the transistor. The model can be used for development of broadband power amplifiers with Schottky FETs.
Keywords :
Schottky gate field effect transistors; circuit CAD; microwave field effect transistors; microwave integrated circuits; microwave power amplifiers; semiconductor device models; wideband amplifiers; MIC optimizer CAD; adaptive model; barrier Schottky FET; broadband power amplifier; field transistor; volt-amps diagram; volt-farad diagram; Equivalent circuits; FETs; Hidden Markov models; IEEE catalog; Organizing;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158803
