DocumentCode
2436677
Title
Constrained codes for phase-change memories
Author
Anxiao Jiang ; Bruck, J. ; Hao Li
Author_Institution
Comput. Sci. & Eng. Dept., Texas A&M Univ., College Station, TX, USA
fYear
2010
fDate
Aug. 30 2010-Sept. 3 2010
Firstpage
1
Lastpage
5
Abstract
Phase-change memories (PCMs) are an important emerging non-volatile memory technology that uses amorphous and crystalline cell states to store data. The cell states are switched using high temperatures. As the semi-stable states of PCM cells are sensitive to temperatures, scaling down cell sizes can bring significant challenges. We consider two potential thermal-based interference problems as the cell density approaches its limit, and study new constrained codes for them.
Keywords
codes; phase change memories; amorphous cell states; cell density approaches; constrained codes; crystalline cell states; nonvolatile memory technology; phase-change memories; thermal-based interference problems; Crosstalk; Decoding; Encoding; Heating; Manganese; Phase change materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Theory Workshop (ITW), 2010 IEEE
Conference_Location
Dublin
Print_ISBN
978-1-4244-8262-7
Electronic_ISBN
978-1-4244-8263-4
Type
conf
DOI
10.1109/CIG.2010.5592680
Filename
5592680
Link To Document