Title :
Microscopic analysis of carrier removal in heavily irradiated silicon solar cells
Author :
Taylor, S.J. ; Yamaguchi, M. ; Imaizumi, Masayuki ; Yang, M.J. ; Ito, T. ; Yamaguchi, T. ; Watanabe, S. ; Ando, K. ; Matsuda, S. ; Hisamatsu, T.
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
fDate :
29 Sep-3 Oct 1997
Abstract :
We compare the effects of 1 MeV electrons and 10 MeV protons on n+/p/p+ silicon diodes, after irradiation and subsequently after annealing. Although the effects of proton and electron irradiation upon device performance are coherent, the defect spectra which the different particles produce are slightly different. The origin of the dominant trap state cannot yet be identified conclusively
Keywords :
annealing; electron radiation; elemental semiconductors; minority carriers; proton effects; semiconductor diodes; silicon; solar cells; 1 MeV; 10 MeV; Si; annealing; carrier removal; defect spectra; dominant trap state; electron effects; electron irradiation; heavily irradiated silicon solar cells; microscopic analysis; n+/p/p+ silicon diodes; proton effects; proton irradiation; Annealing; Capacitance-voltage characteristics; Conductivity; Diodes; Electron traps; Equations; Microscopy; Photovoltaic cells; Protons; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654217
