Microscopic analysis of carrier removal in heavily irradiated silicon solar cells

Author

Taylor, S.J. ; Yamaguchi, M. ; Imaizumi, Masayuki ; Yang, M.J. ; Ito, T. ; Yamaguchi, T. ; Watanabe, S. ; Ando, K. ; Matsuda, S. ; Hisamatsu, T.

Author_Institution

Toyota Technol. Inst., Nagoya, Japan

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

835

Lastpage

838

Abstract

We compare the effects of 1 MeV electrons and 10 MeV protons on n+/p/p+ silicon diodes, after irradiation and subsequently after annealing. Although the effects of proton and electron irradiation upon device performance are coherent, the defect spectra which the different particles produce are slightly different. The origin of the dominant trap state cannot yet be identified conclusively

Keywords

annealing; electron radiation; elemental semiconductors; minority carriers; proton effects; semiconductor diodes; silicon; solar cells; 1 MeV; 10 MeV; Si; annealing; carrier removal; defect spectra; dominant trap state; electron effects; electron irradiation; heavily irradiated silicon solar cells; microscopic analysis; n+/p/p+ silicon diodes; proton effects; proton irradiation; Annealing; Capacitance-voltage characteristics; Conductivity; Diodes; Electron traps; Equations; Microscopy; Photovoltaic cells; Protons; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654217

Filename

654217