Title :
A new index for gate oxide reliability characterization
Author_Institution :
Tower Semicond. Ltd., Migdal Haemek, Israel
Abstract :
A new integral index (K-factor) for gate oxide (GOX) quality and reliability prediction is introduced. The physical meaning of this factor is that a charge leaking through a unit of volume of dielectric, induces a unit change in built-in electric field. The theoretical and experimental background together with examples of the K-factor application for comparing and characterization various gate oxides are presented and discussed. The advantages of this new technique, that should replace the QBD test, are demonstrated
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; electric breakdown; integrated circuit reliability; integrated circuit testing; life testing; CMOS devices; K-factor; SiO2; accelerated wafer level test; gate oxide reliability characterization; integral index; quality prediction; reliability prediction; Anodes; Degradation; Design for quality; Dielectrics; Electric breakdown; Electron traps; Monitoring; Stress; Testing; Voltage;
Conference_Titel :
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-1908-7
DOI :
10.1109/IRWS.1994.515838
