DocumentCode
2437250
Title
Radiation response of single and dual junction p+n InGaP/GaAs space solar cells
Author
Walters, R.J. ; Xapsos, M.A. ; Summers, G.P. ; Cotal, H.L. ; Messenger, S.R.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
843
Lastpage
846
Abstract
The radiation response of single and dual-junction p+n InGaP/GaAs solar cells is studied. The degradation mechanisms of single-junction InGaP cells are identified, and characteristic degradation curves in terms of displacement damage dose are calculated. The response of dual-junction cells is presented, and the response of each sub-cell is discussed. The cell response is compared with those of other technologies. The effect of current injection on irradiated InGaP cell is presented
Keywords
III-V semiconductors; annealing; electron radiation; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; proton effects; solar cells; space vehicle power plants; InGaP-GaAs; current injection; degradation mechanisms; displacement damage dose; dual junction p+n InGaP/GaAs space solar cells; dual-junction cells; electron radiation; injection annealing; irradiated InGaP cell; proton radiation; radiation response; single junction p+n InGaP/GaAs space solar cells; single-junction InGaP cells; sub-cell response; Degradation; Electrons; Filtering; Gallium arsenide; Indium phosphide; NASA; NIST; Photovoltaic cells; Protons; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654219
Filename
654219
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