Title :
Radiation response of single and dual junction p+n InGaP/GaAs space solar cells
Author :
Walters, R.J. ; Xapsos, M.A. ; Summers, G.P. ; Cotal, H.L. ; Messenger, S.R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
The radiation response of single and dual-junction p+n InGaP/GaAs solar cells is studied. The degradation mechanisms of single-junction InGaP cells are identified, and characteristic degradation curves in terms of displacement damage dose are calculated. The response of dual-junction cells is presented, and the response of each sub-cell is discussed. The cell response is compared with those of other technologies. The effect of current injection on irradiated InGaP cell is presented
Keywords :
III-V semiconductors; annealing; electron radiation; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; proton effects; solar cells; space vehicle power plants; InGaP-GaAs; current injection; degradation mechanisms; displacement damage dose; dual junction p+n InGaP/GaAs space solar cells; dual-junction cells; electron radiation; injection annealing; irradiated InGaP cell; proton radiation; radiation response; single junction p+n InGaP/GaAs space solar cells; single-junction InGaP cells; sub-cell response; Degradation; Electrons; Filtering; Gallium arsenide; Indium phosphide; NASA; NIST; Photovoltaic cells; Protons; Sun;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654219
