DocumentCode :
2437572
Title :
Design of an incoherent IR-UWB receiver front-end in 180-nm CMOS technology
Author :
Jihai Duan ; Qiangyu Hao ; Yu Zheng ; Baolin Wei ; Weilin Xu ; Shichao Xu
Author_Institution :
Sch. of Inf. & Commun., Guilin Univ. of Electron. Technol., Guilin, China
fYear :
2015
fDate :
2-4 March 2015
Firstpage :
186
Lastpage :
190
Abstract :
A novel low-complexity RF front-end circuit for impulseradio ultra-wideband (IR-UWB) receiver based on non-coherent communication was presented. The RF front-end includes a wideband low noise amplifier (LNA), a correlator, an integrator and a comparator. The RF front-end circuit is implemented in a 0.18-μm CMOS technology, consuming 35.1 mW under 1.8V. The wideband input impedance matching of LNA is conducted by employing an RC feedback network and a degenerating inductor. A Gilbert mixer is used as the correlator. A current injection technology is used to improve the gain and linearity of the mixer. The simulation results show that: the noise figure (NF) of the LNA is from 2.6 to 3.1 dB and the reflected coefficient (S11) <; -10 dB, covering standard UWB low band of 3~5 GHz. The average power gain (S21) of LNA is about 16.8 dB. The mixer gets a conversion gain of 15.01 dB and its input 3rd order intercept point (IIP3) is -3.47 dBm. The designed receiver front-end can correctly demodulate IR-UWB signals with a data rate of 50Mbps under a power of -90dBm.
Keywords :
CMOS analogue integrated circuits; RC circuits; circuit feedback; comparators (circuits); correlators; impedance matching; inductors; integrated circuit design; low noise amplifiers; microwave integrated circuits; mixers (circuits); radio receivers; ultra wideband communication; wideband amplifiers; CMOS technology; Gilbert mixer; IIP3; IR-UWB receiver front-end; IR-UWB signals; LNA; NF; RC feedback network; bit rate 50 Mbit/s; conversion gain; current injection technology; degenerating inductor; frequency 3 GHz to 5 GHz; gain 15.01 dB; impulse radio ultra-wideband receiver; input third order intercept point; low-complexity RF front-end circuit; noise figure; noise figure 2.6 dB to 3.1 dB; noncoherent communication; power 35.1 mW; power gain; size 18 nm; voltage 1.8 V; wideband input impedance matching; wideband low noise amplifier; CMOS integrated circuits; CMOS technology; Correlators; Gain; Impedance matching; Radio frequency; Receivers; Correlator; Energy detect; LNA; UWB Receiver;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2015 16th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4799-7580-8
Type :
conf
DOI :
10.1109/ISQED.2015.7085422
Filename :
7085422
Link To Document :
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