Title :
Re-interpreting the MOS transistor via the inversion coefficient and the continuum of gms/Id
Author :
Foty, Daniel ; Bucher, Matthias ; Binkley, David
Author_Institution :
Gilgamesh Associates, Fletcher, VT, USA
Abstract :
A method of interpreting MOS transistor behavior is described which is simple yet fundamental and universal. Device currents are normalized to the inversion coefficient (IC) and interpreted via gms/Id. Measurements confirm this behavior, and demonstrate the need for the development of proper model forms for usage of this description. This interpretation also connects directly with modern analog CMOS design needs, allowing for the positive use of moderate and weak inversion, in a manner which permits a coherent evolution of a design toward the final goals.
Keywords :
CMOS analogue integrated circuits; MOSFET; semiconductor device measurement; semiconductor device models; MOS transistor behavior/measurements; MOS transistor evaluation/modeling; MOSFET; analog CMOS design applications; device current normalization; gms/Id continuum; inversion coefficient; moderate/weak inversion; Analog integrated circuits; CMOS analog integrated circuits; CMOS integrated circuits; CMOS technology; Integrated circuit modeling; MOSFETs; Modems; Semiconductor device modeling; Threshold voltage; Transconductance;
Conference_Titel :
Electronics, Circuits and Systems, 2002. 9th International Conference on
Print_ISBN :
0-7803-7596-3
DOI :
10.1109/ICECS.2002.1046463
