• DocumentCode
    24382
  • Title

    CMOS Charge Pump With No Reversion Loss and Enhanced Drivability

  • Author

    Joung-Yeal Kim ; Su-Jin Park ; Kee-Won Kwon ; Bai-Sun Kong ; Joo-Sun Choi ; Young-Hyun Jun

  • Author_Institution
    Memory Div., Samsung .Electron., Hwasung, South Korea
  • Volume
    22
  • Issue
    6
  • fYear
    2014
  • fDate
    Jun-14
  • Firstpage
    1441
  • Lastpage
    1445
  • Abstract
    A CMOS charge pump adopting dual charge transfer switches and a transfer blocking technique is presented. Using these techniques, the proposed charge pump eliminates reversion loss and improves driving capability. A test chip is designed in a 46-nm CMOS process, whose evaluation results show that, with no loading current, the proposed CMOS charge pump achieves 9.1% improvement of voltage conversion ratio. They also show that the proposed charge pump provides up to 132% improvement on current driving capability, as compared with the conventional CMOS charge pumps.
  • Keywords
    CMOS integrated circuits; charge pump circuits; CMOS charge pump; dual charge transfer switches; enhanced drivability; size 46 nm; transfer blocking technique; voltage conversion ratio; Blocking technique; charge pump; voltage doubler; voltage generator; voltage generator.;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2013.2267214
  • Filename
    6553217