Title :
10.6 Gbit/s 2:1 time division multiplexer using dual gate GaAs MESFETs
Author_Institution :
Electromagn. Inst., Tech. Univ. of Denmark, Denmark
Abstract :
A 2:1 time division multiplexer (MUX) has been designed and built with dual-gate GaAs MESFETs in thick film circuits. Pulses of 10.6 Gb/s NRZ (nonreturn-to-zero) have been obtained. The voltage swing of MUX at 10 Gb/s is 1 V, the largest reported to data. The operation of MUX has been simulated by using mwSPICE and good agreement between the measured and simulated switching waveforms has been obtained.<>
Keywords :
Schottky gate field effect transistors; digital communication systems; digital integrated circuits; gallium arsenide; hybrid integrated circuits; multiplexing equipment; optical communication equipment; thick film circuits; time division multiplexing; 10.6 Gbit/s; GaAs; NAND gate; dual gate MESFET; high speed circuits; mwSPICE; simulated switching waveforms; thick film circuits; time division multiplexer; Bit rate; Circuit simulation; Delay effects; Gallium arsenide; Hybrid integrated circuits; MESFETs; Multiplexing; Optical signal processing; Thick film circuits; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99721
