DocumentCode
2438560
Title
Study of nanoscale structure of near-field emission of semiconductor laser
Author
Gaykovich, K.P. ; Dryakhlushin, V.F. ; Zhilin, A.V.
Author_Institution
Inst. for Phys. of Microstruct., Russian Acad. of Sci., Novgorod, Russia
fYear
2003
fDate
8-12 Sept. 2003
Firstpage
519
Lastpage
522
Abstract
Results of studying a thin near-field structure of the semiconductor laser emission using the scanning near-field optical microscopy (SNOM) are presented. Significant enhancement of the resolution has been achieved by the deconvolution of obtained 2D images using Tikhonov´s method. This has enabled the detection of the true nanoscale structure of inhomogeneities in a semiconductor laser emission.
Keywords
image resolution; nanotechnology; near-field scanning optical microscopy; semiconductor lasers; 2D image; SNOM; Tikhonov´s method; nanoscale structure; scanning near-field optical microscopy; semiconductor laser emission; Bills of materials; Computed tomography; Hidden Markov models; IEEE catalog; Nanostructures; Numerical simulation; Organizing; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-26-X
Type
conf
DOI
10.1109/CRMICO.2003.158919
Filename
1256605
Link To Document