• DocumentCode
    2438639
  • Title

    Dependence of a single-electron transistor gain on the position and dimensions of gate electrode

  • Author

    Abramov, I.I. ; Ignatenko, S.A.

  • Author_Institution
    Belarussian State Univ. of Informatics & Radioelectron., Minsk, Belarus
  • fYear
    2003
  • fDate
    8-12 Sept. 2003
  • Firstpage
    532
  • Lastpage
    533
  • Abstract
    The gain of a single-electron transistor depending on the position and dimensions of the gate electrode has been studied. Experimental data for an Al/AlO/sub X//Al transistor have been used in computation.
  • Keywords
    aluminium compounds; single electron transistors; Al-AlO-Al; gate electrode; single-electron transistor; Artificial intelligence; Electric resistance; Electric variables; Electrodes; Helium; IEEE catalog; Informatics; Material properties; Organizing; Single electron transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea, Ukraine
  • Print_ISBN
    966-7968-26-X
  • Type

    conf

  • DOI
    10.1109/CRMICO.2003.158924
  • Filename
    1256610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2438639