A Q-band monolithic balanced diode mixer using AlGaAs/GaAs HEMT and CPW hybrid

Author

Chen, T.H. ; Ton, T.N. ; Dow, G.S. ; Nakano, K. ; Liu, L.C.T. ; Berenz, J.

Author_Institution

TRW/ESG, Redondo Beach, CA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

895

Abstract

A Q-band balanced diode mixer developed using AlGaAs/GaAs HEMTs (high electron-mobility transistor) as diodes, a CPW (coplanar waveguide) ratrace hybrid, and a lumped-element, low-pass filter is presented. The mixer can be easily integrated with the RF, LO (local oscillator) and IF HEMT amplifiers on one chip because it uses HEMT as a mixer diode. Furthermore, the mixer does not require backside and via-hole process and has small size (1.4 mm*1.5 mm). Therefore, it has good RF circuit yield. The mixer downconverts the 41-48-GHz RF to a 0.5-3.5-GHz IF. Without DC bias, it shows 9.4-dB conversion loss for RF at 42 GHz, with a LO drive of 11 dBm at 44.45 GHz. The mixer is the first monolithic CPW mixer for operation at Q-band frequencies.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; mixers (circuits); 0.5 to 3.5 GHz; 41 to 48 GHz; 9.4 dB; AlGaAs-GaAs; CPW hybrid; EHF; HEMT; MIMIC; MM-wave circuit; Q-band; conversion loss; coplanar waveguide; high electron-mobility transistor; low-pass filter; millimetre wave operation; monolithic balanced diode mixer; ratrace hybrid; Coplanar waveguides; Diodes; Gallium arsenide; HEMTs; Local oscillators; Low pass filters; MODFETs; Mixers; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99722

Filename

99722