DocumentCode
2438658
Title
The influence of contact area widths on the RTD I-V characteristics
Author
Abramov, I.I. ; Goncharenko, I.A.
Author_Institution
Dept. of Informatics & Radioelectron., Belarussian State Univ., Minsk, Belarus
fYear
2003
fDate
8-12 Sept. 2003
Firstpage
534
Lastpage
535
Abstract
The influence of the widths of the RTD contact areas on its I-V characteristics has been investigated. This paper demonstrates the variations in the area widths significantly influence the RTD characteristics. Calculations have been performed using a combined model and its modifications based on the self-consistent solution to the Schrodinger and Poisson equations. This model has been integrated into the NS-RTS-NANODEV numerical simulation software suite.
Keywords
Poisson equation; Schrodinger equation; numerical analysis; resonant tunnelling diodes; NS-RTS-NANODEV; Poisson equation; RTD; Schrodinger equation; numerical simulation software; resonant tunneling diode; self-consistent solution; Computational modeling; Helium; Hidden Markov models; IEEE catalog; Informatics; Microwave technology; Numerical simulation; Ohmic contacts; Organizing; Poisson equations;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-26-X
Type
conf
DOI
10.1109/CRMICO.2003.158925
Filename
1256611
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