DocumentCode
2438769
Title
Evaluation of the predictive capability of Berkeley´s hot-carrier reliability model
Author
Meehan, Alan ; Sullivan, Paula O. ; Hurley, Paul ; Mathewson, Alan
Author_Institution
Nat. Microelectron. Res. Centre, Cork, Ireland
fYear
1994
fDate
16-19 Oct 1994
Firstpage
148
Abstract
A model for hot-carrier reliability prediction developed at the University of California is widely used in industry. Confusion exists, however, as to how the model is to be applied. The model´s devisers suggest that hot-carrier degradation is most rapid when substrate current is maximum, yet the model itself is in strong disagreement with this. Since the minimum lifetime for a given drain voltage is of most interest, the minimum prediction of the model needs to be evaluated. The necessity of using a novel hot-carrier stress method in the evaluation is demonstrated
Keywords
carrier lifetime; hot carriers; integrated circuit modelling; integrated circuit reliability; semiconductor device models; semiconductor device reliability; Berkeley model; drain voltage; hot-carrier degradation; hot-carrier reliability model; hot-carrier stress method; minimum lifetime; predictive capability; substrate current; Degradation; Equations; Hot carrier effects; Hot carriers; Life estimation; Performance evaluation; Predictive models; Stress; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-1908-7
Type
conf
DOI
10.1109/IRWS.1994.515848
Filename
515848
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