• DocumentCode
    2438769
  • Title

    Evaluation of the predictive capability of Berkeley´s hot-carrier reliability model

  • Author

    Meehan, Alan ; Sullivan, Paula O. ; Hurley, Paul ; Mathewson, Alan

  • Author_Institution
    Nat. Microelectron. Res. Centre, Cork, Ireland
  • fYear
    1994
  • fDate
    16-19 Oct 1994
  • Firstpage
    148
  • Abstract
    A model for hot-carrier reliability prediction developed at the University of California is widely used in industry. Confusion exists, however, as to how the model is to be applied. The model´s devisers suggest that hot-carrier degradation is most rapid when substrate current is maximum, yet the model itself is in strong disagreement with this. Since the minimum lifetime for a given drain voltage is of most interest, the minimum prediction of the model needs to be evaluated. The necessity of using a novel hot-carrier stress method in the evaluation is demonstrated
  • Keywords
    carrier lifetime; hot carriers; integrated circuit modelling; integrated circuit reliability; semiconductor device models; semiconductor device reliability; Berkeley model; drain voltage; hot-carrier degradation; hot-carrier reliability model; hot-carrier stress method; minimum lifetime; predictive capability; substrate current; Degradation; Equations; Hot carrier effects; Hot carriers; Life estimation; Performance evaluation; Predictive models; Stress; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop, 1994. Final Report., 1994 International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-1908-7
  • Type

    conf

  • DOI
    10.1109/IRWS.1994.515848
  • Filename
    515848