DocumentCode
2438919
Title
Improved electromigration test techniques of layered metal structures at wafer level
Author
Katto, Hisao
Author_Institution
Device Dev. Center, Hitachi Ltd., Japan
fYear
1994
fDate
16-19 Oct 1994
Firstpage
149
Abstract
The current constant stress (J-constant) technique is useful for evaluating the resistance rise, but can not evaluate “n” values because of metal temperature scattering among samples. Two modified Jc techniques are advised. By controlling the metal temperature at t(stress)=0 within ±1°C of the target temperature, the “temperature-controlled” J-constant technique can evaluate n values efficiently. By monitoring the power and adjusting the stress current, the power-constant technique can reduce excess joule-heating and keep the metal temperature constant during stress, and smaller n values are obtained
Keywords
Acceleration; Argon; Artificial intelligence; Electromigration; Heating; Monitoring; Scattering; Stress; Temperature control; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-1908-7
Type
conf
DOI
10.1109/IRWS.1994.515849
Filename
515849
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