• DocumentCode
    2438919
  • Title

    Improved electromigration test techniques of layered metal structures at wafer level

  • Author

    Katto, Hisao

  • Author_Institution
    Device Dev. Center, Hitachi Ltd., Japan
  • fYear
    1994
  • fDate
    16-19 Oct 1994
  • Firstpage
    149
  • Abstract
    The current constant stress (J-constant) technique is useful for evaluating the resistance rise, but can not evaluate “n” values because of metal temperature scattering among samples. Two modified Jc techniques are advised. By controlling the metal temperature at t(stress)=0 within ±1°C of the target temperature, the “temperature-controlled” J-constant technique can evaluate n values efficiently. By monitoring the power and adjusting the stress current, the power-constant technique can reduce excess joule-heating and keep the metal temperature constant during stress, and smaller n values are obtained
  • Keywords
    Acceleration; Argon; Artificial intelligence; Electromigration; Heating; Monitoring; Scattering; Stress; Temperature control; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop, 1994. Final Report., 1994 International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-1908-7
  • Type

    conf

  • DOI
    10.1109/IRWS.1994.515849
  • Filename
    515849