Title :
Effects of substrate inhomogeneity on the sidegating threshold voltage in GaAs integrated circuits
Author :
Gorev, N.B. ; Kodzhespirova, I.F. ; Privalov, Ye.N. ; Khuchua, N.P. ; Khvedelidze, L.V. ; Tigishgvili, M.G.
Author_Institution :
Inst. of Tech. Mech., Nat. Acad. of Sci., Dnipropetrovsk, Ukraine
Abstract :
The results of numerical simulation of the backgating effect in the case of a spatially inhomogeneous substrate are presented. It is shown that having a local region of increased resistivity in the substrate offers a considerably higher backgating (sidegating) threshold voltage.
Keywords :
III-V semiconductors; MOSFET; electrical resistivity; gallium arsenide; integrated circuits; substrates; GaAs; GaAs integrated circuit; backgating effect; resistivity; sidegating threshold voltage; spatially inhomogeneous substrate effect; Conductivity; Gallium arsenide; IEEE catalog; Integrated circuit technology; Numerical simulation; Organizing; Poisson equations; Space technology; Substrates; Threshold voltage;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158942
