DocumentCode
2439004
Title
Wafer bonding for use in mechanically stacked multi-bandgap cells
Author
Sharps, P.R. ; Timmons, M.L. ; Hills, J.S. ; Gray, J.L.
Author_Institution
Res. Triangle Inst., Research Triangle Park, NC, USA
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
895
Lastpage
898
Abstract
Two and three junction monolithic two-terminal solar cells have been developed that have 1-Sun, AM0 efficiencies of greater than 25%. In order to reach 1-Sun efficiencies of 30% and greater, solar cells with more junctions are required. Mechanically stacking junctions with different band gaps provides a means of developing such a cell. The authors propose a four-junction, mechanically stacked cascade solar cell structure that projects to a 34.8% AM0 efficiency. Wafer bonding provides a means of mechanically joining semiconductor materials with different lattice constants. They present optical, electrical and mechanical data on wafer bonding GaAs and InP substrates. The data indicate that wafer bonding can be used to develop a four-junction device
Keywords
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; semiconductor device testing; solar cells; wafer bonding; 34.8 percent; GaInP-GaAs-InP-GaInAsP-GaInAs; GaInP/GaAs/InP/GaInAsP/GaInAs solar cells; cascade solar cell structure; electrical data; four-junction multi-bandgap solar cells; lattice constants; mechanical data; mechanical stacking; optical data; semiconductor materials; substrates; wafer bonding; Current limiters; Gallium arsenide; Indium phosphide; Lattices; Manufacturing; Photonic band gap; Semiconductor materials; Stacking; Substrates; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654231
Filename
654231
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