Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

Author

Yazawa, Y. ; Tamura, K. ; Watahiki, S. ; Kitatani, T. ; Ohtsuka, H. ; Warabisako, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

899

Lastpage

902

Abstract

Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; semiconductor device testing; silicon; solar cells; GaInP-GaAs-Si; GaInP/GaAs tandem solar cell; absorption loss; epitaxial lift-off technique; mechanical stacking; performance improvement; spectral response; Absorption; Diodes; Etching; Gallium arsenide; Photonic band gap; Photovoltaic cells; Semiconductor materials; Semiconductor thin films; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654232

Filename

654232