Monolithic two-junction AlGaAs/GaAs solar cells

Author

Andreev, V.M. ; Khvostikov, V.P. ; Rumyantsev, V.D. ; Paleeva, E.V. ; Shvarts, M.Z.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

927

Lastpage

930

Abstract

Monolithic two-junction two-terminal AlGaAs/GaAs solar cells were grown during two-stage liquid phase epitaxy. At the first stage the GaAs-based bottom subcell with a tunnel junction was grown on n-GaAs(Sn) substrate. Test samples of such a cell without layers of the tunnel junction and with thin enough p-Al_0.9Ga_0.1As window layer demonstrated the efficiencies of 27.5% (AM1.5D, 140 Suns) and of about 25% (AM1.5D, 1000-1500 Suns). At the second stage, the top AlGaAs subcell was grown. The following parameters have been measured in tandems: V_OC=2.53 V, FF=0.80 at 50 Suns (AM0). An efficiency of 20.3% (AM0) has been achieved

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; p-n heterojunctions; semiconductor device testing; semiconductor growth; solar cells; 2.53 V; 20.3 percent; 25 percent; 27.5 percent; Al_0.9Ga_0.1As; AlGaAs-GaAs; AlGaAs/GaAs monolithic two-junction solar cell; bottom subcell; p-Al_0.9Ga_0.1As window layer; parameters measurement; top subcell; tunnel junction; two-stage liquid phase epitaxial semiconductor growth; Coatings; Epitaxial growth; Gallium arsenide; Indium phosphide; MOCVD; Photovoltaic cells; Substrates; Sun; Testing; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654239

Filename

654239