Title :
Over 31%-efficient GaAs/GaSb tandem concentrator solar cells
Author :
Bett, A.W. ; Keser, S. ; Stollwerck, G. ; Sulima, O.V. ; Wettling, W.
Author_Institution :
Fraunhofer-Inst. fur Solare Energiesyst., Freiburg, Germany
fDate :
29 Sep-3 Oct 1997
Abstract :
GaAs/GaSb tandem concentrator solar cells were fabricated. Both, the GaAs concentrator top cells and the GaSb bottom cells were produced using an inexpensive technology: LPE etchback-regrowth process and Zn vapor-phase diffusion process, respectively. The antireflection coatings and contact alloys were improved. A tandem efficiency of 31.1% under 100×AM1.5d was achieved. The first tandem concentrator module with an area of 486 cm2 achieved an outdoor efficiency of 23.0%
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; gallium compounds; liquid phase epitaxial growth; semiconductor device testing; semiconductor growth; solar cells; solar energy concentrators; 23 percent; 31.1 percent; GaAs-GaSb; GaAs/GaSb tandem concentrator solar cells; LPE etchback-regrowth process; Zn vapor-phase diffusion process; antireflection coatings; bottom cell; contact alloys; performance tests; top cells; Coatings; Costs; Design optimization; Diffusion processes; Doping; Etching; Gallium arsenide; Photovoltaic cells; Wiring; Zinc;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654240
