DocumentCode :
2439281
Title :
Influence of bonding thickness on stability of integrated circuits at effect of electromagnetic fields
Author :
Starostenko, V.V. ; Grygoriev, Ye.V. ; Taran, Ye.P. ; Rukavishnikov, A.V.
Author_Institution :
Tavrical Nat. Univ., Simferopol, Ukraine
fYear :
2003
fDate :
8-12 Sept. 2003
Firstpage :
628
Lastpage :
629
Abstract :
The technique of numerical calculation of stability integrated circuits is adduced depending on thickness (depth) of bonding at effect of pulse electromagnetic fields. The data on influencing depth of inhomogeneous bonding on threshold values of an electric field strength of a dropping electromagnetic wave are obtained.
Keywords :
electromagnetic pulse; integrated circuit bonding; thickness measurement; electric field strength; inhomogeneous bonding; integrated circuit stability; pulse electromagnetic field; Bonding; CMOS technology; Circuit stability; EMP radiation effects; Electromagnetic fields; IEEE catalog; Integrated circuit technology; Organizing; Pulse circuits; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
Type :
conf
DOI :
10.1109/CRMICO.2003.158959
Filename :
1256645
Link To Document :
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