Title :
Tandem GaSb/InGaAsSb thermophotovoltaic cells
Author :
Andreev, V.M. ; Khvostikov, V.P. ; Larionov, V.R. ; Rumyantsev, V.D. ; Sorokina, S.V. ; Shvarts, M.Z. ; Vasil´ev, V.I. ; Vlasov, A.S.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
29 Sep-3 Oct 1997
Abstract :
Computer modelling of a tandem thermophotovoltaic (TPV) system has been carried out. The monolithic GaSb/InGaAsSb tandem TPV devices have been designed and fabricated by LPE. The cell consists of: nGaSb (substrate); (n-p)InxGa1-xAsySb1-y (Eg≈0.56 eV, bottom cell); p++-n++ GaSb (tunnel junction); (n-p)-GaSb (top cell). External quantum yields of 80% at 800-1600 nm wavelength (top cell) and of about 75% at 1800-2100 nm (bottom cell) have been measured. VOC=0.61 V and FF=0.75 were achieved in a tandem cell at current density of 0.7 A/cm 2
Keywords :
III-V semiconductors; gallium compounds; liquid phase epitaxial growth; p-n heterojunctions; photovoltaic cells; semiconductor device models; semiconductor growth; 0.56 eV; 0.61 V; 1800 to 2100 nm; 800 to 1600 nm; GaSb-InGaAsSb; GaSb/InGaAsSb tandem thermophotovoltaic cells; LPE; bottom cell; computer modelling; current density; external quantum yields; substrate; top cell; tunnel junction; Current density; Design optimization; P-n junctions; Photonic band gap; Photovoltaic cells; Physics computing; Radiative recombination; Sun; Temperature; Wavelength measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654241
