DocumentCode
2439661
Title
A low loss monolithic five-bit PIN diode phase shifter
Author
Coats, R. ; Klein, J. ; Pritchett, S.D. ; Zimmermann, D.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1990
fDate
8-10 May 1990
Firstpage
915
Abstract
A novel monolithic 5-b phase-shifter topology made realizable by the use of PIN diode switching elements has demonstrated lower insertion loss than that available from more conventional configurations. The phase shifter features predicted insertion loss <3.0 dB and VSWR (voltage standing wave ratio) <1.6:1 over the 20% frequency band in the X-band region. Monolithic chips have been fabricated and evaluated. The experimental results presented indicate that these performance goals are achievable.<>
Keywords
MMIC; p-i-n diodes; phase shifters; 3 dB; 9.5 GHz; PIN diode; SHF; X-band region; insertion loss; low loss design; monolithic microwave IC; phase shifter; Diodes; FETs; Filters; Frequency; Gallium arsenide; Insertion loss; Phase shifters; Phased arrays; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location
Dallas, TX
Type
conf
DOI
10.1109/MWSYM.1990.99727
Filename
99727
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