Effect of the irradiation temperature on the spectral response of Si solar cells

Author

Bourgoin, Jacques C.

Author_Institution

Groupe de Phys. des Solides, Paris VII Univ., France

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

943

Lastpage

946

Abstract

The authors describe the variation of the spectral response of LILT, Si solar cells especially designed for deep space missions irradiated with 10¹⁶ cm^-2, 1 MeV, electrons versus the temperature of irradiation in the range 80-300 K. Since the spectral response SR(λ) is temperature dependent, the degradation is given in terms of the quantity 1-SR(λ)/SR₀(λ) where SR₀ is the spectral response of the unirradiated cell. These data are correlated with the changes induced by the irradiation in the short circuit current. Information on the main recombination centers introduced by the irradiation at various temperatures can then be extracted

Keywords

aerospace testing; elemental semiconductors; semiconductor device testing; silicon; solar cells; space vehicle power plants; 1 MeV; 80 to 300 K; Si; Si solar cells; deep space missions; irradiation temperature; recombination centers; short circuit current; space power; spectral response; Data mining; Degradation; Electrons; Lighting; Photovoltaic cells; Short circuit currents; Space missions; Spontaneous emission; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654243

Filename

654243