• DocumentCode
    244007
  • Title

    Mitigating NBTI Degradation on FinFET GPUs through Exploiting Device Heterogeneity

  • Author

    Ying Zhang ; Sui Chen ; Lu Peng ; Shaoming Chen

  • Author_Institution
    Div. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
  • fYear
    2014
  • fDate
    9-11 July 2014
  • Firstpage
    577
  • Lastpage
    582
  • Abstract
    Recent experimental studies reveal that FinFET devices commercialized in recent years tend to suffer from moresevere NBTI degradation compared to planar transistors, necessitating effective techniques on processors built with FinFET for endurable operations. We propose to address this problem by exploiting the device heterogeneity and leveraging the slower NBTI aging rate manifested on the planar devices. We focus on modern graphics processing units in this study due to their wide usage in the current community. We validate the effectiveness of the technique byapplying it to the warp scheduler and demonstrate NBTIdegradation is considerably alleviated with slight performance overhead.
  • Keywords
    MOSFET; graphics processing units; negative bias temperature instability; semiconductor device reliability; FinFET GPUs; NBTI degradation; device heterogeneity; graphics processing units; planar devices; reliability; Degradation; Delays; FinFETs; Graphics processing units; Hardware; Kernel; FinFET; NBTI; heterogeneity; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI (ISVLSI), 2014 IEEE Computer Society Annual Symposium on
  • Conference_Location
    Tampa, FL
  • Print_ISBN
    978-1-4799-3763-9
  • Type

    conf

  • DOI
    10.1109/ISVLSI.2014.21
  • Filename
    6903426