DocumentCode
244007
Title
Mitigating NBTI Degradation on FinFET GPUs through Exploiting Device Heterogeneity
Author
Ying Zhang ; Sui Chen ; Lu Peng ; Shaoming Chen
Author_Institution
Div. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
fYear
2014
fDate
9-11 July 2014
Firstpage
577
Lastpage
582
Abstract
Recent experimental studies reveal that FinFET devices commercialized in recent years tend to suffer from moresevere NBTI degradation compared to planar transistors, necessitating effective techniques on processors built with FinFET for endurable operations. We propose to address this problem by exploiting the device heterogeneity and leveraging the slower NBTI aging rate manifested on the planar devices. We focus on modern graphics processing units in this study due to their wide usage in the current community. We validate the effectiveness of the technique byapplying it to the warp scheduler and demonstrate NBTIdegradation is considerably alleviated with slight performance overhead.
Keywords
MOSFET; graphics processing units; negative bias temperature instability; semiconductor device reliability; FinFET GPUs; NBTI degradation; device heterogeneity; graphics processing units; planar devices; reliability; Degradation; Delays; FinFETs; Graphics processing units; Hardware; Kernel; FinFET; NBTI; heterogeneity; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI (ISVLSI), 2014 IEEE Computer Society Annual Symposium on
Conference_Location
Tampa, FL
Print_ISBN
978-1-4799-3763-9
Type
conf
DOI
10.1109/ISVLSI.2014.21
Filename
6903426
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