DocumentCode
2440091
Title
The influence of dense plasma of microwave discharge on the parameters of IC structures
Author
Bordusov, S.V.
Author_Institution
Belarussian State Univ. of Informatics & Radioelectron., Minsk, Belarus
fYear
2003
fDate
8-12 Sept. 2003
Firstpage
728
Lastpage
729
Abstract
The existing techniques of vacuum plasma processing (cleaning, etching, deposition of materials) usually introduce significant additional structural imperfections into near-surface layers and films compromising their electrophysical properties and, consequently, parameters of devices manufactured on their basis.
Keywords
high-frequency discharges; integrated circuit manufacture; microwave integrated circuits; plasma deposition; sputter etching; surface cleaning; vacuum microelectronics; vacuum techniques; IC structure; dense plasma; device manufacturing; electrophysical property; material cleaning; material deposition; material etching; microwave discharge; structural imperfection; surface film; surface layer; vacuum plasma processing; Cleaning; Etching; Microwave devices; Microwave integrated circuits; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma properties; Vacuum technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-26-X
Type
conf
DOI
10.1109/CRMICO.2003.158998
Filename
1256684
Link To Document