Title :
Long-wavelength laser power converters for optical fibers
Author :
Wojtczuk, Steven J.
Author_Institution :
Spire Corp., Bedford, MA, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
Measured responsivity and illuminated I-V data are presented for III-V InxGa1-xAs-based photovoltaic cells with bandgaps of 1.42 eV (GaAs), 0.74 (lattice-matched In0.53Ga 0.47As), and 0.55 eV (“extended” lattice-mismatched In0.7Ga0.3As) relevant to their application as laser power converters (LPCs) sensitive to infrared light out to a long cutoff wavelength of 2.3 μm. The authors present an analysis that shows the optimum LPC size to use with a Gaussian illumination profile. They compare some of the tradeoffs of more complex multijunction LPCs with simpler single-junction LPCs used with commercial DC-DC power converter chips
Keywords :
DC-DC power convertors; III-V semiconductors; gallium arsenide; indium compounds; power transmission; semiconductor device models; semiconductor device testing; semiconductor lasers; solar cells; 0.55 eV; 0.74 eV; 1.42 eV; 2.3 mum; DC-DC power converter chips; Gaussian illumination profile; InxGa1-xAs solar cells; InGaAs; bandgaps; laser power converters; long cutoff wavelength; optical fibers; optical power transmission; Fiber lasers; Gallium arsenide; III-V semiconductor materials; Laser applications; Linear predictive coding; Optical fibers; Photonic band gap; Photovoltaic cells; Power lasers; Power measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654250
