Long-wavelength laser power converters for optical fibers

Author

Wojtczuk, Steven J.

Author_Institution

Spire Corp., Bedford, MA, USA

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

971

Lastpage

974

Abstract

Measured responsivity and illuminated I-V data are presented for III-V In_xGa_1-xAs-based photovoltaic cells with bandgaps of 1.42 eV (GaAs), 0.74 (lattice-matched In_0.53Ga _0.47As), and 0.55 eV (“extended” lattice-mismatched In_0.7Ga_0.3As) relevant to their application as laser power converters (LPCs) sensitive to infrared light out to a long cutoff wavelength of 2.3 μm. The authors present an analysis that shows the optimum LPC size to use with a Gaussian illumination profile. They compare some of the tradeoffs of more complex multijunction LPCs with simpler single-junction LPCs used with commercial DC-DC power converter chips

Keywords

DC-DC power convertors; III-V semiconductors; gallium arsenide; indium compounds; power transmission; semiconductor device models; semiconductor device testing; semiconductor lasers; solar cells; 0.55 eV; 0.74 eV; 1.42 eV; 2.3 mum; DC-DC power converter chips; Gaussian illumination profile; In_xGa_1-xAs solar cells; InGaAs; bandgaps; laser power converters; long cutoff wavelength; optical fibers; optical power transmission; Fiber lasers; Gallium arsenide; III-V semiconductor materials; Laser applications; Linear predictive coding; Optical fibers; Photonic band gap; Photovoltaic cells; Power lasers; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654250

Filename

654250