Title :
MIS capacitor radiation sensor with giant internal signal amplification on a base of UHR epi silicon [photodetector]
Author :
Malik, Alexander ; Grimalsky, Volodymyr ; Tsou, Mark C. ; Durini, Daniel ; Lo, Chi-Tang
Author_Institution :
Opt., & Electron. (INAOE), Nat. Inst. for Astrophys., Puebla, Mexico
Abstract :
The theoretical model of a new metal-insulator-semiconductor (MIS) radiation sensor, possessing a giant internal signal amplification, is proposed, to describe the experimentally obtained results. The sensor is fabricated on an ultra-high resistivity (UHR) epi layer (>10 k/spl Omega//spl middot/cm) on a heavily doped wafer. Theoretical modeling explains the giant value of the internal amplification of the signal that is determined as the ratio of peak values of readout currents and instantaneous photo current. With an integration time of about 1 sec, the amplification coefficient is of the order of 10/sup 4/ in the case of a 10-50 k/spl Omega/ external load, and it is of the order of 10/sup 6/ when the external load is smaller than 1 k/spl Omega/.
Keywords :
MIS capacitors; photodetectors; semiconductor device measurement; semiconductor device models; semiconductor epitaxial layers; 1 kohm; 1 sec; 10 kohmcm; 10 to 50 kohm; MIS capacitor radiation sensor; UHR epi silicon; amplification coefficient; external load resistance; giant internal signal amplification; integration time; metal-insulator-semiconductor radiation sensor; photo current; photosensor; readout current; ultra-high resistivity epi layer; Astrophysics; Capacitive sensors; Capacitors; Circuits; Conductivity; Pulse generation; Semiconductor device modeling; Silicon; Titanium; Voltage;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256812
