Title :
New Fowler Nordheim current determination in EEPROM cell from transient measurements
Author :
Laffont, R. ; Masson, P. ; Canet, P. ; Delsuc, B. ; Bouchakour, R. ; Mirabel, J.M.
Author_Institution :
L2MP, UMR-CNRS, Marseille, France
Abstract :
In this work, we present a new simple method to determine the actual tunnel current in EEPROM cell during erase operation. From this method, we compare the classically tunneling current measured on large test capacitor and the real current of the tunnelling area. The result obtained from such. transient analysis must improve the tunneling current modeling which is major parameter in the EEPROM cell behavior. Moreover our approach can be use for the verification of the injection current in case of write or erase cell operation disturb.
Keywords :
EPROM; equivalent circuits; transient analysis; tunnelling; EEPROM cell; Fowler Nordheim current determination; actual tunnel current; equivalent circuit; erase operation; injection current; transient analysis; transient measurements; tunneling current modeling; Application specific integrated circuits; Area measurement; Current measurement; EPROM; Equivalent circuits; MOS capacitors; Nonvolatile memory; Testing; Transient analysis; Tunneling;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256813
