Title :
Localized charge storage in nanocrystal memories: feasibility of a multi-bit cell
Author :
Corso, D. ; Crupi, I. ; Ancarani, V. ; Ammendola, G. ; Molas, G. ; Perniola, L. ; Lombardo, S. ; Gerardi, C. ; De Salvo, B.
Author_Institution :
CNR-IMM, Sezione Di Catania, Italy
Abstract :
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cell for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.
Keywords :
chemical vapour deposition; elemental semiconductors; flash memories; hot carriers; nanoelectronics; semiconductor quantum dots; silicon; Si; channel hot electron programming; charge retention; chemical vapor deposition; control oxide; endurance; flash technology; localized charge storage; multi-bit cell; nanocrystal memory cells; program-erase mechanisms; tunnel oxide; Chemical vapor deposition; Dielectrics; Electron traps; Nanocrystals; Nonvolatile memory; Potential well; Rapid thermal processing; Scalability; Silicon; Temperature;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256818
